RN1421_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1421∼RN1427
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1421,RN1422,RN1423,RN1424
RN1425,RN1426,RN1427
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
z High current type (I_C (max) = 800mA)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Low V_CE (sat)
z Complementary to RN2401~RN2406
Equivalent Circuit and Bias Resister Values
Type No.
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1421~1427
RN1421~1424
RN1425, 1426
RN1427
RN1421~1427
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
50
V
50
V
10
5
V
6
800
mA
200
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01