RN1421 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1421~RN1427
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1421,RN1422,RN1423,RN1424
RN1425,RN1426,RN1427
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC (max) = 800mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN2401~RN2406
Equivalent Circuit and Bias Resister Values
Type No.
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1421~1427
RN1421~1424
RN1425, 1426
RN1427
RN1421~1427
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
50
50
10
5
6
800
200
150
−55~150
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Unit
V
V
V
mA
mW
°C
°C
1
2002-02-08