RN1414_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1414∼RN1418
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1414, RN1415, RN1416,RN1417, RN1418
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2414~RN2418
Equivalent Circuit and Bias Resistor Values
Type No.
RN1414
RN1415
RN1416
RN1417
RN1418
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
SC-236MOD
SC-59
2-3F1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1414~1418
RN1414
RN1415
RN1416
RN1417
RN1418
RN1414~1418
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
50
V
50
V
5
6
7
V
15
25
100
mA
200
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01