RN1414 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1414~RN1418
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1414,RN1415,RN1416
RN1417,RN1418
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2414~RN2418
Equivalent Circuit and Bias Resister Values
Type No.
RN1414
RN1415
RN1416
RN1417
RN1418
R1 (kΩ)
1
2.2
4.7
10
47
R2 (kΩ)
10
10
10
4.7
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1414~1418
RN1414
RN1415
RN1416
RN1417
RN1418
RN1414~1418
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
50
50
5
6
7
15
25
100
200
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
SC-236MOD
SC-59
2-3F1A
Unit
V
V
V
mA
mW
°C
°C
1
2001-06-07