RN1412 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1412,RN1413
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1412,RN1413
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2412, RN2413
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
Unit
50
V
50
V
5
V
100
mA
200
mW
150
°C
−55~125
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1412
RN1413
Symbol
I_CBO
I_EBO
h_{FE (note)}
V_{CE (sat)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_EB = 5V, I_C = 0
― V_CE = 5V, I_C = 1mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 10V, I_C = 5mA
― V_CB = 10V, I_E = 0, f = 1MHz
R1
―
―
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
120
―
700
―
0.1
0.3
V
―
250
― MHz
―
3
6
pF
15.4 22 28.6
kW
32.9 47 61.1
1
2001-06-07