RN1407 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1407,RN1408,RN1409
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1407,RN1408,RN1409
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2407~RN2409
Equivalent Circuit and Bias Resister Values
Type No.
RN1407
RN1408
RN1409
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1407~RN1409
RN1407~RN1409
RN1407
RN1408
RN1409
RN1407~RN1409
RN1407~RN1409
RN1407~RN1409
RN1407~RN1409
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Rating
Unit
50
V
50
V
6
7
V
15
100
mA
200
mW
150
°C
−55~150
°C
1
2001-06-07