|
RN1401_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |||
|
RN1401ï½RN1406
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1401, RN1402, RN1403
RN1404, RN1405, RN1406
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
z With built-in bias resistors
z Simplified circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2401~RN2406
Equivalent Circuit and Bias Resistor Values
Type No.
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
R1 (kâ¦
4.7
10
22
47
2.2
4.7
R2 (kâ¦
4.7
10
22
47
47
47
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1401~1406
RN1401~1404
RN1405, 1406
RN1401~1406
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
50
V
50
V
10
V
5
100
mA
200
mW
150
°C
â55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
|
▷ |