RN1401 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1401,RN1402,RN1403,RN1404,RN1405,RN1406
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1401,RN1402,RN1403
RN1404,RN1405,RN1406
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2401~RN2406
Equivalent Circuit and Bias Resister Values
Type No.
RN1401
RN1402
RN1403
RN1404
RN1405
RN1406
R1 (kΩ
4.7
10
22
47
2.2
4.7
R2 (kΩ
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1401~1406
RN1401~1404
RN1405, 1406
RN1401~1406
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
50
50
10
5
100
200
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
TO-236MOD
SC-59
2-3F1A
Unit
V
V
V
mA
mW
°C
°C
1
2001-06-07