RN1321A Datasheet, PDF (1/11 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1321A∼RN1327A
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1321A,RN1322A,RN1323A,RN1324A
RN1325A,RN1326A,RN1327A
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
z High current driving is possible.
z Since bias resisters are built in the transistor,the miniaturization of the
apparatus by curtailment of the number of parts and laborsaving of an
assembly are possible.
z Many kinds of resistance value are lined up in order to support various
kinds of circuit design.
z Complementary to RN2321A~RN2327A
z Low V_CE(sat) enable to be low power dissipation on high current driving.
Equivalent Circuit And Bias Resistance Values
Type No.
RN1321A
RN1322A
RN1323A
RN1324A
RN1325A
RN1326A
RN1327A
R1 (kΩ)
1
2.2
4.7
10
0.47
1
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
1. BASE
2. EMITTER
3. COLLECTOR
JEDEC
⎯
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1321A~1327A
RN1321A~1324A
RN1325A, 1326A
RN1327A
RN1321A~1327A
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
15
V
12
V
10
5
V
6
500
mA
100
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01