RN1310_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1310,RN1311
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1310,RN1311
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2310, RN2311
Equivalent Circuit
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Symbol
V_CBO
Rating
50
JEDEC
―
Unit
EIAJ
TOSHIBA
SC-70
2-2E1A
V
Weight: 0.006g
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_c
100
mA
Collector power dissipation
P_c
100
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1310
RN1311
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_EB = 5V, I_C = 0
― V_CE = 5V, I_C = 1mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 10V, I_C = 5mA
― V_CB = 10V, I_E = 0, f = 1MHz
R1
―
―
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
120
―
700
―
―
0.1 0.3
V
― 250 ― MHz
―
3
6
pF
3.29 4.7 6.11
kΩ
7
10
13
1
2007-11-01