RN1301 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1301~RN1306
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1301,RN1302,RN1303
RN1304,RN1305,RN1306
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2301~RN2306
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1301
4.7
RN1302
10
RN1303
22
RN1304
47
RN1305
2.2
RN1306
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1301~1306
RN1301~1304
RN1305, 1306
RN1301~1306
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
Rating
50
50
10
5
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
Unit
V
V
V
mA
mW
°C
°C
―
SC-70
2-2E1A
1
2001-06-07