RN1241 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1241~RN1244
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
Unit: mm
l High emitter-base voltage
: VEBO = 25v (min)
l High reverse hfe
: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)
l Low on resistance
: RON = 1Ω (typ.) (IB = 5mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Rating
Unit
50
V
20
V
25
V
300
mA
300
mW
150
°C
−55~150
°C
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2-4E1A
1
2001-06-07