RN1221_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1221,RN1222,RN1223,RN1224
RN1225,RN1226,RN1227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
z High current type (I_C(MAX) = 800mA)
z With built-in bias resistors.
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Low _{VCE (sat)}
z Complementary to RN2221~2227
Equivalent Circuit
Type No. R1 (kΩ) R2 (kΩ)
RN1221
1
1
RN1222
2.2
2.2
RN1223
4.7
4.7
RN1224
10
10
RN1225 0.47
10
RN1226
1
10
RN1227
2.2
10
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
―
―
2-4E1A
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1221~1227
RN1221~1224
RN1225, 1226
RN1227
RN1221~1227
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
50
V
50
V
10
5
V
6
800
mA
300
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01