RN1221 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1221,RN1222,RN1223,RN1224
RN1225,RN1226,RN1227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC(MAX) = 800mA)
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN2221~2227
Equivalent Circuit
Type No. R1 (kΩ)
RN1221
1
RN1222
2.2
RN1223
4.7
RN1224
10
RN1225
0.47
RN1226
1
RN1227
2.2
R2 (kΩ)
1
2.2
4.7
10
10
10
10
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
―
―
2-4E1A
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1221~1227
RN1221~1224
RN1225, 1226
RN1227
RN1221~1227
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
Rating
Unit
50
V
50
V
10
5
V
6
800
mA
300
mW
150
°C
−55~150
°C
1
2001-06-07