RN1210_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1210,RN1211
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1210,RN1211
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
z With built-in bias resistors.
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2210, RN2211
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
Rating
50
50
5
Unit
JEDEC
V
EIAJ
V
TOSHIBA
Weight: 0.13g
V
100
mA
300
mW
150
°C
−55~150
°C
―
―
2-4E1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1210
RN1211
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
f_T
C_ob
R1
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_EB = 5V, I_C = 0
― V_CE = 5V, I_C = 1mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 10V, I_C = 5mA
― V_CB = −10V, I_E = 0, f = 1MHz
―
―
―
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
120
―
700
―
―
0.1
0.3
V
―
250
― MHz
―
3
6
pF
3.29 4.7 6.11
kΩ
7
10
13
1
2007-11-01