RN1208 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1207~RN1209
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1207,RN1208,RN1209
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2207~2209
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN2207
10
RN2208
22
RN2208
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1207
RN1208
RN1209
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
Rating
50
50
6
7
15
100
300
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
―
―
2-4E1A
1
2001-06-07