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RN1201 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | |||
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RN1201~RN1206
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1201,RN1202,RN1203,RN1204,RN1205,RN1206
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2201~2206
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kâ¦) R2 (kâ¦)
RN1201
4.7
4.7
RN1202
10
10
RN1203
22
22
RN1204
47
47
RN1205
2.2
47
RN1206
4.7
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1201~1206
RN1201~1204
RN1205, 1206
RN1201~1206
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
10
5
100
300
150
â55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Unit
V
V
V
mA
mW
°C
°C
â
â
2-4E1A
1
2001-06-07
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