RN1112FT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1112FT,RN1113FT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1112FT,RN1113FT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Unit: mm
· High-density mount is possible because of devices housed in very thin
TESM packages.
· Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
· Wide range of resistor values are available to use in various circuit
designs.
· Complementary to RN2112FT, RN2113FT
Equivalent Circuit and Bias Resistor Values
C
R1
B
E
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector poser dissipation
Junction temperature
Storage temperature range
Note: Total rating
Symbol
Rating
Unit
V_CBO
50
V
V_CEO
50
V
V_EBO
5
V
I_C
100
mA
P_C (Note)
100
mW
T_j
150
°C
T_stg
-55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: g (typ.)
1
2002-01-29