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RN1112FS Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1112,RN1113
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1112, RN1113
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and simplified process
z Complementary to RN2112 and RN2113
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
50
V
50
V
5
V
100
mA
100
mW
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1112
RN1113
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Test
Circuit
Test Condition
― VCB = 50 V, IE = 0
― VEB = 5 V, IC = 0
― VCE = 5 V, IC = 1 mA
― IC = 5 mA, IB = 0.25 mA
― VCE = 10 V, IC = 5 mA
― VCB = 10 V, IE = 0, f = 1 MHz
R1
―
―
Min Typ. Max Unit
―
― 100 nA
―
― 100 nA
120
―
700
―
―
0.1 0.3
V
― 250 ― MHz
―
3
6
pF
15.4 22 28.6
kΩ
32.9 47 61.1
1
2010-03-07