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RN1112F Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |||
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RN1112F,RN1113F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1112F,RN1113F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2112F, RN2113F
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
Unit
JEDEC
V
EIAJ
V
TOSHIBA
5
V
100
mA
100
mW
150
°C
â55~150
°C
â
â
2-2HA1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1112F
RN1113F
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
R1
Test
Circuit
Test Condition
â VCB = 50V, IE = 0
â VEB = 5V, IC = 0
â VCE = 5V, IC = 1mA
â IC = 5mA, IB = 0.25mA
â VCE = 10V, IC = 5mA
â VCB = 10V, IE = 0, f = 1MHz
â
â
Min Typ. Max Unit
â
â
100
nA
â
â
100
nA
120
â
700
â
â
0.1
0.3
V
â
250
â MHz
â
3
6
pF
15.4 22 28.6
kâ¦
32.9 47 61.1
1
2001-06-07
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