RN1112ACT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1112ACT, RN1113ACT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1112ACT,RN1113ACT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces the number of parts,
which enables the manufacture of ever more compact equipment and
saves assembly cost.
• Complementary to RN2112ACT, RN2113ACT
Equivalent Circuit and Bias Resistor Values
0.6±0.05
0.5±0.03
• Unit: mm
３
１
２
0.35±0.02
0.15±0.03
0.05±0.03
CST3
1.BASE
2.EMITTER
3.COLLECOTR
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
JEDEC
JEITA
TOSHIBA
―
―
2-1J1A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
50
V
V_CEO
50
V
V_EBO
5
V
I_C
80
mA
P_C (Note1)
100
mW
T_j
150
°C
T_stg
−55 to 150
°C
Weight:0.75 mg (typ.)
Note1: Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-13