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RN1110_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |||
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RN1110,RN1111
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1110, RN1111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2110~RN2111
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
Ic
Pc
Tj
Tstg
Rating
50
50
JEDEC
Unit
EIAJ
V
TOSHIBA
Weight: 2.4mg
V
5
V
100
mA
100
mW
150
°C
â55~150
°C
â
â
2-2H1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1110
RN1111
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Test
Circuit
Test Condition
â VCB = 50 V, IE = 0
â VEB = 5 V, IC = 0
â VCE = 5 V, IC = 1 mA
â IC = 5 mA, IB = 0.25 mA
â VCE = 10 V, IC = 5 mA
â VCB = 10 V, IE = 0, f = 1 MHz
R1
â
â
Min Typ. Max Unit
â
â
0.1
μA
â
â
0.1
μA
120
â
700
â
â
0.1 0.3
V
â 250 â MHz
â
3
6
pF
3.29 4.7 6.11
kâ¦
7
10
13
1
2007-11-01
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