RN1110F Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1110F,RN1111F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1110F,RN1111F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2110F, RN2111F
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characterisstic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
Rating
50
JEDEC
Unit
EIAJ
V
TOSHIBA
50
V
5
V
100
mA
100
mW
150
°C
−55~150
°C
―
―
2-2HA1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Translation frequency
Collector output capacitance
Input resistor
RN1110F
RN1111F
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
f_T
C_ob
R1
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_EB = 5V, I_C = 0
 V_CE = 5V, I_C = 1mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 10V, I_C = 5mA
 V_CB = 10V, I_E = 0, f = 1MHz
―
―
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
120 ―
700
―
―
0.1
0.3
V
― 250
―
MHz
―
3
6
pF
3.29 4.7 6.11
kΩ
7
10
13
1
2001-06-07