RN1107_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107, RN1108, RN1109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors.
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ) R2 (kΩ)
RN1107
10
47
RN1108
22
47
RN1109
47
22
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
―
―
2-2H1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107~1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107~1109
RN1107~1109
RN1107~1109
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
50
V
50
V
6
7
V
15
100
mA
100
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01