RN1107FS Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107, RN1108, RN1109
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors.
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2107 to 2109
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ) R2 (kΩ)
RN1107
10
47
RN1108
22
47
RN1109
47
22
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4mg (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107 to 1109
RN1107 to 1109
RN1107
RN1108
RN1109
RN1107 to 1109
RN1107 to 1109
RN1107 to 1109
RN1107 to 1109
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
50
V
50
V
6
7
V
15
100
mA
100
mW
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2010-04-06