RN1107ACT Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1107ACT ~ RN1109ACT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1107ACT, RN1108ACT, RN1109ACT
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Extra small package(CST3) is applicable for extra high density
fabrication.
• Incorporating a bias resistor into a transistor reduces the number of parts,
which enables the manufacture of ever more compact equipment and
saves assembly cost.
• Complementary to RN2107ACT to RN2109ACT
TOP View
0.6±0.05
0.5±0.03
３
１
２
Unit: mm
Equivalent Circuit and Bias Resistor Values
0.35±0.02
0.15±0.03
0.05±0.03
C
R1
B
E
Type No.
RN1107ACT
RN1108ACT
RN1109ACT
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
Absolute Maximum Ratings (Ta = 25°C)
CST3
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
JEITA
TOSHIBA
―
―
2-1J1A
Weight: 0.75 mg (typ.)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
RN1107ACT to RN1109ACT
Collector-emitter voltage
V_CEO
50
V
RN1107ACT
6
Emitter-base voltage
RN1108ACT
V_EBO
7
V
RN1109ACT
15
Collector current
I_C
80
mA
Collector power dissipation
P_C (Note1) 100
mW
RN1107ACT to RN1109ACT
Junction temperature
T_j
150
°C
Storage temperature range
T_stg −55 to 150 °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1 : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
1
2009-04-13