RN1107 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1107~1109
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1107,RN1108,RN1109
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors.
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2107~2109
Equivalent Circuit and Bias Resistor Values
Type No. R1 (kΩ)
RN1107
10
RN1108
22
RN1109
47
R2 (kΩ)
47
47
22
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1107~1109
RN1107~1109
RN1107
RN1108
RN1109
RN1107~1109
RN1107~1109
RN1107~1109
RN1107~1109
Symbol
V_CBO
V_CEO
V_EBO
I_c
P_c
T_j
T_stg
Rating
50
50
6
7
15
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
V
V
V
mA
mW
°C
°C
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2-2H1A
1
2001-06-07