RN1101_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1101∼RN1106
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101, RN1102, RN1103,
RN1104, RN1105, RN1106
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors
z Simplified circuit design
z Reduced number of parts and simplified manufacturing process
z Complementary to RN2101~ RN2106
Equivalent Circuit and Bias Resister Values
Type No.
RN1101
RN1102
RN1103
RN1104
RN1105
RN1106
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 2.4 mg
―
―
2-2H1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101~1106
RN1101~1104
RN1105, 1106
RN1101~1106
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
50
V
50
V
10
V
5
100
mA
100
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01