RN1101MFV Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1101MFV∼RN1106MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101MFV,RN1102MFV,RN1103MFV
RN1104MFV,RN1105MFV,RN1106MFV
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Ultra-small package, suited to very high density mounting
Incorporating a bias resistor into the transistor reduces the number of parts,
so enabling the manufacture of ever more compact equipment and
lowering assembly cost.
A wide range of resistor values is available for use in various circuits.
Complementary to the RN2101MFV~RN2106MFV
Lead (Pb) - free
Unit: mm
1.2 ± 0.05
0.80 ± 0.05
1
1
3
2
Equivalent Circuit and Bias Resistor Values
Type No.
RN1101MFV
RN1102MFV
RN1103MFV
RN1104MFV
RN1105MFV
RN1106MFV
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
VESM
1. BASE
2. EMITTER
3. COLLECTOR
JEDEC
―
JEITA
TOSHIBA
―
2-1L1A
Weight: 0.0015 g (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
RN1101MFV~1106MFV
Collector-emitter voltage
V_CEO
50
V
RN1101MFV~1104MFV
10
Emitter-base voltage
V_EBO
V
RN1105MFV, 1106MFV
5
Collector current
I_C
100
mA
Collector power dissipation
P_C(Note)
150
mW
RN1101MFV~1106MFV
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)
0.5
0.45
1.15
0.4
0.45
0.4 0.4
1
2005-03-30