RN1101F_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1101F∼RN1106F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101F,RN1102F,RN1103F
RN1104F,RN1105F,RN1106F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2101F~RN2106F
Unit in mm
Equivalent Circuit And Bias Resister Values
Type No.
RN1101F
RN1102F
RN1103F
RN1104F
RN1105F
RN1106F
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 2.3 mg
―
―
2-2H1A
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101F~1106F
RN1101F~1104F
RN1105F, 1106F
RN1101F~1106F
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
50
V
50
V
10
V
5
100
mA
100
mW
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01