RN1101F Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – SWITCHING ,INVERTER CIRCUIT,INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS

RN1101F~RN1106F
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101F,RN1102F,RN1103F
RN1104F,RN1105F,RN1106F
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2101F~RN2106F
Unit in mm
Equivalent Circuit And Bias Resister Values
Type No.
RN1101F
RN1102F
RN1103F
RN1104F
RN1105F
RN1106F
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1101F~1106F
RN1101F~1104F
RN1105F, 1106F
RN1101F~1106F
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Rating
50
50
10
5
100
100
150
−55~150
JEDEC
EIAJ
TOSHIBA
Weight: 2.3 mg
―
―
2-2H1A
Unit
V
V
V
mA
mW
°C
°C
000707EAA2
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