RN1101CT Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN1101CT ~ RN1106CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101CT,RN1102CT,RN1103CT
RN1104CT,RN1105CT,RN1106CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
• Complementary to RN2101CT to RN2106CT
Equivalent Circuit and Bias Resistor Values
0.6±0.05
0.5±0.03
Unit: mm
３
１
２
0.35±0.02
0.15±0.03
0.05±0.03
C
R1
B
E
Type No.
RN1101CT
RN1102CT
RN1103CT
RN1104CT
RN1105CT
RN1106CT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
CST3
1.BASE
2. EMITTER
3, COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating Unit
Collector-base voltage
Collector-emitter voltage
RN1101CT to 1106CT
Emitter-base voltage
RN1101CT to 1104CT
RN1105CT, 1106CT
Collector current
Collector power dissipation
RN1101CT ro 1106CT
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
20
V
20
V
10
V
5
50
mA
50
mW
150
°C
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-13