RN1101ACT Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Switching Applications Inverter Circuit Applications Interface Circuit Applications

RN1101ACT ~ RN1106ACT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1101ACT,RN1102ACT,RN1103ACT
RN1104ACT,RN1105ACT,RN1106ACT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
• Incorporating a bias resistor into a transistor reduces the number of parts,
which enables the manufacture of ever more compact equipment and
saves assembly cost.
• Complementary to RN2101ACT to RN2106ACT
Equivalent Circuit and Bias Resistor Values
0.6±0.05
0.5±0.03
Unit: mm
３
１
２
0.35±0.02
0.15±0.03
0.05±0.03
C
R1
B
E
Type No.
RN1101ACT
RN1102ACT
RN1103ACT
RN1104ACT
RN1105ACT
RN1106ACT
R1 (kΩ)
4.7
10
22
47
2.2
4.7
R2 (kΩ)
4.7
10
22
47
47
47
CST3
1.BASE
2. EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1J1A
Weight: 0.75 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN1101ACT to 1106ACT
RN1101ACT to 1104ACT
RN1105ACT, 1106ACT
V_CBO
V_CEO
V_EBO
50
V
50
V
10
V
5
Collector current
I_C
80
mA
Collector power dissipation
P_C (Note1)
100
mW
RN1101ACT to 1106ACT
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55 to 150 °C
Note1: Mounted on FR4 board (10 mm × 10 mm × 1 mm)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-11