RN1010 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1010, RN1011
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1010,RN1011
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2010~RN2011
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
50
V
50
V
5
V
100
mA
400
mW
150
°C
−55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
TO-92
SC-43
2-5F1B
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1010
RN1011
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
f_T
C_ob
R1
Test
Circuit
Test Condition
― V_CB = 50V, I_E = 0
― V_EB = 5V, I_C = 0
― V_CE = 5V, I_C = 1mA
― I_C = 5mA, I_B = 0.25mA
― V_CE = 10V, I_C = 5mA
― V_CB = 10V, I_E = 0, f = 1MH_z
―
Min Typ. Max Unit
―
―
100
nA
―
―
100
nA
120
―
700
―
0.1
0.3
V
―
250
―
MH_z
―
3
6
pF
3.29 4.7 6.11
kΩ
7
10
13
1
2001-06-07