|
RN1001 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications | |||
|
RN1001~RN1006
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1001,RN1002,RN1003
RN1004,RN1005,RN1006
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2001~RN2006
Equivalent Circuit and Bias Resister Values
Type No.
RN1001
RN1002
RN1003
RN1004
RN1005
RN1006
R1 (kâ¦)
4.7
10
22
47
2.2
4.7
R2 (kâ¦)
4.7
10
22
47
47
47
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1001~1006
RN1001~1004
RN1005, 1006
RN1001~1006
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
10
5
100
400
150
â55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
Unit
V
V
V
mA
mW
°C
°C
TO-92
SC-43
2-5F1B
1
2001-06-07
|
▷ |