RFM08U9X Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – RF POWER MOSFET FOR VHF.AND UHF.BAND POWER AMPLIFIER

RFM08U9X
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
RFM08U9X
RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Unit: mm
z Output Power
z Power Gain
z Drain Efficiency
: P_O ≥ 7.5W
: G_P ≥ 11.7dB
: η_D ≥ 50%
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
V_DSS
V_GSS
I_D
P_D*
T_ch
T_stg
36
25
5
20
150
−45~150
*: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
Marking
UNIT
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
—
—
2−5N1A
UF
1
2007-05-15