MT6L75FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

MT6L75FS
TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE
MT6L75FS
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
Two devices are built in to the fine pich small mold package (6pins):fs6
• It exsels in the buffer and oscillation use.
Mounted Devices
Three-pin fSM mold products are corresponded
Q1
MT3S07FS
Q2
MT3S106FS
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
1
6
2
5
3
4
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector power dissipation
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C (Note 1)
RATING
Q1
Q2
10
13
5
6
1.5
1
25
80
10
20
100
110 (Note 2)
UNIT
V
V
V
mA
mA
mW
1.COLLECTOR 1
2.EMITTER1
3.COLLECTOR2
4.BASE2
5.EMITTER2
6.BASE1
fS6
JEDEC
―
JEITA
―
TOSHIBA
2-1F1A
Weight : 0.001g (typ.)
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1 : 10 mm² × 1.0 mm (t) at the time of glass epoxy printed circuit board mounting.
Note 2 : At the time of two-element operation
Marking (top view)
6
5
4
52
Pin Assignment (top view)
B1 E2 B2
Q1
Q2
1
2
3
C1 E1 C2
1
2007-11-01