MT6L68FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L68FS
MT6L68FS
VHF~UHF Band Low-Noise Amplifier Applications
Unit: mm
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
• Superior noise characteristics
• Superior performance in buffer and oscillator applications
Mounted Devices
Corresponding three-pin products:
TESM(fSM) mold products
Q1
MT3S06T
(MT3S06FS)
Q2
MT3S11T
(MT3S11FS)
0.1±0.05
1.0±0.05
0.8±0.05
0.1±0.05
1
6
2
5
3
4
fS6
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V_CBO
V_CEO
V_EBO
Rating
Unit
Q1
Q2
10
13
V
5
6
V
1.5
1
V
JEDEC
JEIAJ
TOSHIBA
1. Collector1 (C1)
2. Emitter1 (E1)
3. Collector2 (C2)
4. Base2 (B2)
5. Emitter2 (E2)
6. Base1 (B1)
―
―
2-1F1A
Collector current
I_C
15
40
mA
Weight: 0.001g (typ.)
Base current
I_B
7
10
mA
Collector power dissipation
100
P_C (Note 1)
mW
110 (Note 2)
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: 10 mm² × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation.
Marking (top view)
Pin Assignment (top view)
6
5
4
1K
1
2
3
6
5
4
Q1
Q2
1
2
3
1
2007-11-01