MT6L63FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L63FS
MT6L63FS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
• Superior noise characteristics
• Superior performance in buffer and oscillator applications
Mounted Devices
Corresponding three-pin products:
TESM(fSM) mold products
Q1
MT3S07T
(MT3S07FS)
Q2
MT3S11T
(MT3S11FS)
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
1
6
2
5
3
4
fS6
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Q1
Q2
1. Collector1 (C1)
2. Emitter1 (E1)
3. Collector2 (C2)
4. Base2 (B2)
5. Emitter2 (E2)
6. Base1 (B1)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
V_CBO
10
V_CEO
5
V_EBO
1.5
I_C
25
I_B
10
13
V
6
V
JEDEC
JEITA
1
V
TOSHIBA
―
―
2-1F1A
40
mA
Weight: 0.001g (typ.)
10
mA
Collector power dissipation
100
P_C(Note 1)
mW
110(Note 2)
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: 10 mm² × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation
Marking (top view)
6
5
4
Pin Assignment (top view)
B1 E2 B2
18
Q1
Q2
1
2
3
C1 E1 C2
1
2007-11-01