MT6L61AT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL PLANAR TYPE

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L61AT
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
MT6L61AT
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Q1
Q2
Collector-base voltage
V_CBO
10
10
V
Collector-emitter voltage
V_CEO
5
5
V
Emitter-base voltage
V_EBO
1.5
2
V
Collector current
I_C
25
40
mA
Base current
I_B
10
10
mA
Collector power dissipation
P_C
200
mW
(Note1)
Junction temperature
T_j
Storage temperature range
T_stg
125
°C
-55~125
°C
Note1: Total power dissipation of Q1 and Q2
Three pin SSM type part No.
Q1
MT3S07S
Q2
MT3S04AS
JEDEC
―
JEITA
―
TOSHIBA
2-2JA1C
Weight: 0.008 g (typ.)
1
2002-01-18