MT6L58AFS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low-Noise Amplifier Applications

MT6L58AFS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AFS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
z Superior noise characteristics
z Superior performance in buffer and oscillator applications.
Mounted Devices
Corresponding three-pin products:
TESM(fSM) mold products
Q1
MT3S06T
(MT3S06FS)
Q2
MT3S03AT
(MT3S03AFS)
0.1±0.05
1.0±0.05
0.8±0.05
Unit: mm
0.1±0.05
1
6
2
5
3
4
fS6
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector- base voltage
Symbol
Rating
Unit
V_CBO
10
10
V
1. Collector1 (C1)
2. Emitter1 (E1)
3. Collector2 (C2)
4. Base2 (B2)
5. Emitter2 (E2)
6. Base1 (B1)
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
V_CEO
V_EBO
I_C
I_B
P_C(Note 1)
5
5
1.5
2
15
40
7
10
100
110 (Note 2)
V
V
JEDEC
JEIAJ
mA
Toshiba
―
―
2-1F1A
mA
Weight: 0.001g (typ.)
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 10 mm² × 1.0 mm (t), mounted on a glass-epoxy printed circuit board.
Note 2: During two-element operation
Marking (top view)
6
5
4
15
1
2
3
Pin Assignment (top view)
6
5
4
Q1
Q2
1
2
3
1
2007-11-01