MT6L58AE_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AE
MT6L58AE
VHF~UHF Band Low Noise Amplifier Applications
• Two devices are built in to the super-thin and extreme super mini (6
pins) package: ES6
Mounted Devices
Three-pins (SSM/TESM) mold
products are corresponded.
Q1: SSM (TESM)
MT3S06S
(MT3S06T)
Q2: SSM (TESM)
MT3S03AS
(MT3S03AT)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
10
10
V
V_CEO
5
5
V
V_EBO
1.5
2
V
I_C
15
40
mA
I_B
7
10
mA
P_C
100
mW
(Note 1)
T_j
125
°C
T_stg
−55~125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 0.003 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2.
Marking
Pin Assignment (top view)
1
2007-11-01