MT6L57AT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L57AT
MT6L57AT
VHF~UHF Band Low Noise Amplifier Applications
• Two devices are built in to the super-thin and ultra super mini (6
pins) package: TU6
Mounted Devices
Three-pins (SSM/TESM) mold
products are corresponded.
Q1: SSM (TESM)
MT3S06S
(MT3S06T)
Q2: SSM (TESM)
MT3S04AS
(MT3S04AT)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Q1
Q2
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
10
10
V
5
5
V
1.5
2
V
15
40
mA
7
10
mA
150
mW
125
°C
−55~125
°C
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-2JA1C
Weight: 0.0045 g (typ.)
Pin Assignment (top view)
1
2003-09-19