MT6L55E Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF-UHF Band Low Noise Amplifier Application

Preliminary ^{TOSHIBA Transistor Silicon NPN Epitaxial Planar Type}
MT6L55E
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
MT6L55E
Unit: mm
• Two devices are built into the super-thin and ultra-super-mini (6-pin)
ES6 package.
Mounted Devices
Three-pin (SSM/TESM) product No.
Q1: SSM (TESM) Q2: TESM
MT3S07S
(MT3S07T)
MT3S05T
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
V_CBO
10
10
V
Collector-emitter voltage
V_CEO
5
5
V
Emitter-base voltage
V_EBO
1.5
2
V
Collector current
I_C
25
40
mA
Base current
I_B
10
10
mA
Collector power dissipation
P_C (Note 1)
150
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 3 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board
Marking
Pin Connections
654
B1 E2 B2
AR
Q1
Q2
123
C1 E1 C2
1
2007-11-01