MT6L54E Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF-UHF Band Low Noise Amplifier Application

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L54E
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
• Tow devices are built in to the super-thin and ultra super mini (6 pin)
package: ES6
MT6L54E
Unit: mm
Three pin (SSM/TESM) type part No.
Q1: SSM (TESM)
MT3S06S
(MT3S06T)
Q2: TESM
MT3S08T
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
V_CBO
10
20
V
Collector-emitter voltage
V_CEO
5
8
V
Emitter-base voltage
V_EBO
1.5
1.5
V
Collector current
I_C
15
40
mA
Base current
I_B
7
10
mA
Collector power dissipation
P_C (Note 1)
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55 to 125
°C
Note 1: Total power dissipation of Q1 and Q2
Pin Assignment
Marking
JEDEC
―
JEITA
―
TOSHIBA
2-2N1C
Weight: 0.003 g (typ.)
B1 E2 B2
654
Q1
Q2
ZD
C1 E1 C2
123
1
2003-07-11