MT4S34U Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.

TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT4S34U
MT4S34U
Tentative
VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.
- Low Noise : Figure : NF=1.2dB(at f=2GHz)
- High Gain : |S21e|²=14dB(at f=2GHz)
MAXIMUM RATINGS (Ta=25deg.)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
6
3
1.5
36
12
100
125
-55-125
UNIT
V
V
V
mA
mA
mW
deg
deg.
MARKING
21
2.1ʶ0.1
1.25ʶ0.1
1
4
2
3
ç
1.BASE
ç 2.EMITTER
ç 3.COLLECTOR
ç 4.EMITTER
JEDEC
-
EIAJ
-
TOSHIBA
34
MICROWAVE CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC
Transition Frequency
Insertion Gain
Noise Figure
SYMBOL
fT
ʛS21eʛ²
NF
TEST CONDITION
VCE=2VɼIC=20mA
VCE=2VɼIC=20mAɼf=2GHz
VCE=2VɼIC=5mAɼf=2GHz
MIN.
15
12
-
TYP.
19
14
1.2
MAX.
-
17
TBD
UNIT
GHz
dB
dB
ELECTRICAL CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transistor Capacitance
SYMBOL
TEST CONDITION
ICBO VCB=6VɼIE=0
IEBO VEB=1VɼIC=0
hFE VCE=2VɼIC=20mA
Cob VCB=2VɼIE=0ɼf=1MHz (Note)
Cre
NOTE : Cre is measured by 3 terminal method with capacitance bridge
MIN.
-
-
TBD
-
-
TYP.
-
-
TBD
0.4
0.2
MAX.
1
1
TBD
-
-
UNIT
uA
uA
-
pF
pF
CAUTION
This device is sensitive to electrostatic discharge. Please make each tool and equipment earthed when you handle.