MT4S24U Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF~UHF Band Low Noise Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S24U
VHF~UHF Band Low Noise Amplifier Applications
• Low Noise Figure: NF = 1.55dB(Typ.) (@f = 2GHz)
• High Gain: |S21e|² = 11.5dB(Typ.) (@f = 2 GHz)
MT4S24U
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_CBO
10
V
V_CEO
5
V
V_EBO
2
V
I_C
50
mA
I_B
10
mA
P_C(Note.1)
175
mW
Tj
150
°C
Tstg
−55 to 150
°C
USQ
1.Emitter1(E1)
2.Collector(C)
3.Emitter2(E2)
4.Base(B)
JEDEC
―
JEITA
―
TOSHIBA
2-2K1A
Weight: 6 mg (typ.)
Note.1: The device is mounted on a FR4 board (20mm X 25mm X 1.55 mm (t))
Note.2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
4
3 _{Type Name}
R8
1
2
1
2010-08-18