MT4S200U Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – UHF-SHF Low Noise Amplifier Application

MT4S200U
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
MT4S200U
UHF-SHF Low Noise Amplifier Application
Unit: mm
FEATURES
• Low Noise Figure :NF=1.7dB (@f=5.8GHz)
• High Gain:|S21e|²=9.5dB (@f=5.8GHz)
Marking
4
3
P２
1
2
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
V_CBO
V_CEO
V_EBO
I_C
I_B
Pc
8
V
4
V
1.2
V
35
mA
5
mA
100
mW
Collector Power dissipation
P_C(Note1)
140
mW
Junction temperature
T_j
150
°C
Storage temperature Range
T_stg
−55~150
°C
Note1 : Ta=25degC (When mounted on a 1.6mm(t) glass epoxy PCB)
USQ
1.Collector
2.Emitter
3.Base
4.Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-2K1E
Weight: 0.006 g (typ.)
1
2006-12-26