MT4S100T_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – UHF Low Noise Amplifier Application

MT4S100T
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planer Type
MT4S100T
UHF Low Noise Amplifier Application
FEATURES
• Low Noise Figure :NF=0.72dB (@f=2GHz)
• High Gain:|S21e|²=17.0dB (@f=2GHz)
1.2±0.05
0.9±0.05
Unit:mm
Marking
4
3
P6
1
2
Absolute Maximum Ratings (Ta = 25°C)
1. Collector
2. Emitter
3. Base
4. Emitter
TESQ
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
6
V
3
V
1.2
V
15
mA
7
mA
45
mW
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.0015 g
―
―
2-1G1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01