MT4S100T Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – UHF LOW NOISE AMPLIFIER APPLICATION

MT4S100T
TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE
TENTATIVE
MT4S100T
UHF LOW NOISE AMPLIFIER APPLICATION
FEATURES
· Low Noise Figure :NF=0.72dB (@f=2GHz)
· High Gain:|S21e|²=17.0dB (@f=2GHz)
Unit: mm
1.2±0.05
0.9±0.05
Marking
2
1
Type name
P6
3
4
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Symbol
Rating
Unit
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
6
V
3
V
1.2
V
15
mA
7
mA
45
mW
150
°C
−55~150
°C
1
4
2
3
1. BASE
2. EMITTER
3. COLLECTOR
4. EMITTER
TESQ
JEDEC
-
JEITA
-
TOSHIBA
-
Weight: 0.0015 g
1
02-05-28